JPH0425488B2 - - Google Patents

Info

Publication number
JPH0425488B2
JPH0425488B2 JP58059307A JP5930783A JPH0425488B2 JP H0425488 B2 JPH0425488 B2 JP H0425488B2 JP 58059307 A JP58059307 A JP 58059307A JP 5930783 A JP5930783 A JP 5930783A JP H0425488 B2 JPH0425488 B2 JP H0425488B2
Authority
JP
Japan
Prior art keywords
temperature
resistor
bridge
circuit
gauge
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58059307A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59184819A (ja
Inventor
Kazuji Yamada
Hideo Sato
Kanji Kawakami
Kazuo Kato
Takao Sasayama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP58059307A priority Critical patent/JPS59184819A/ja
Priority to EP84103678A priority patent/EP0126907B1/en
Priority to DE8484103678T priority patent/DE3479831D1/de
Priority to US06/597,753 priority patent/US4604899A/en
Publication of JPS59184819A publication Critical patent/JPS59184819A/ja
Publication of JPH0425488B2 publication Critical patent/JPH0425488B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L1/00—Measuring force or stress, in general
    • G01L1/20—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress
    • G01L1/22—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges
    • G01L1/2268—Arrangements for correcting or for compensating unwanted effects
    • G01L1/2281—Arrangements for correcting or for compensating unwanted effects for temperature variations
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/02—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning
    • G01L9/06—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning of piezo-resistive devices
    • G01L9/065—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning of piezo-resistive devices with temperature compensating means

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Measuring Fluid Pressure (AREA)
  • Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)
  • Indication And Recording Devices For Special Purposes And Tariff Metering Devices (AREA)
  • Measurement Of Resistance Or Impedance (AREA)
JP58059307A 1983-04-06 1983-04-06 半導体圧力センサ Granted JPS59184819A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP58059307A JPS59184819A (ja) 1983-04-06 1983-04-06 半導体圧力センサ
EP84103678A EP0126907B1 (en) 1983-04-06 1984-04-04 Temperature compensated semiconductor-type pressure transducer
DE8484103678T DE3479831D1 (en) 1983-04-06 1984-04-04 Temperature compensated semiconductor-type pressure transducer
US06/597,753 US4604899A (en) 1983-04-06 1984-04-06 Semiconductor-type pressure transducer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58059307A JPS59184819A (ja) 1983-04-06 1983-04-06 半導体圧力センサ

Publications (2)

Publication Number Publication Date
JPS59184819A JPS59184819A (ja) 1984-10-20
JPH0425488B2 true JPH0425488B2 (en]) 1992-05-01

Family

ID=13109581

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58059307A Granted JPS59184819A (ja) 1983-04-06 1983-04-06 半導体圧力センサ

Country Status (4)

Country Link
US (1) US4604899A (en])
EP (1) EP0126907B1 (en])
JP (1) JPS59184819A (en])
DE (1) DE3479831D1 (en])

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6212827A (ja) * 1985-07-10 1987-01-21 Hitachi Ltd エンジンの燃焼圧検出装置
US4798093A (en) * 1986-06-06 1989-01-17 Motorola, Inc. Apparatus for sensor compensation
US4766763A (en) * 1987-05-05 1988-08-30 Kulite Semiconductor Products, Inc. Gas leak detection apparatus and methods
JP2928526B2 (ja) * 1989-02-10 1999-08-03 株式会社日本自動車部品総合研究所 電源回路及び前記回路を備えるブリッジ型測定器出力補償回路
JP2577493B2 (ja) * 1990-07-23 1997-01-29 ホーヤ株式会社 シリコン台座用ガラス、シリコン基材型センサー、及びシリコン基材型圧力センサー
JPH05256716A (ja) * 1992-03-13 1993-10-05 Mitsubishi Electric Corp 半導体装置
US5437180A (en) * 1993-11-19 1995-08-01 Sowinski; Richard F. Detection of natural gas within a customer's domain
US5515715A (en) * 1993-11-19 1996-05-14 Sowinski; Richard F. Method and means for filtering contaminants from a gas stream to aid detection
RU2165602C2 (ru) * 1999-03-18 2001-04-20 Рябов Владимир Тимофеевич Полупроводниковый датчик давления
US6483372B1 (en) * 2000-09-13 2002-11-19 Analog Devices, Inc. Low temperature coefficient voltage output circuit and method
RU2200306C2 (ru) * 2001-05-03 2003-03-10 Волгоградский государственный технический университет Устройство для измерения давления
US8082796B1 (en) * 2008-01-28 2011-12-27 Silicon Microstructures, Inc. Temperature extraction from a pressure sensor
WO2015103030A1 (en) 2013-12-31 2015-07-09 Johnson & Johnson Consumer Companies, Inc. Process for forming a multi layered shaped film

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5638961B2 (en]) * 1972-06-30 1981-09-10
CH616743A5 (en) * 1977-07-01 1980-04-15 Bbc Brown Boveri & Cie Device for measuring the density of gaseous media.
JPS5453877A (en) * 1977-10-07 1979-04-27 Hitachi Ltd Temperature compensation circuit of semiconductor strain gauge
JPS55113904A (en) * 1979-02-26 1980-09-02 Hitachi Ltd Method of zero point temperature compensation for strain-electric signal transducer
JPS5663227A (en) * 1979-10-30 1981-05-29 Toshiba Corp Pressure detecting device
US4345477A (en) * 1980-12-03 1982-08-24 Honeywell Inc. Semiconduction stress sensing apparatus
JPS57113337A (en) * 1981-01-07 1982-07-14 Hitachi Ltd Semiconductor transducer
DE3131431A1 (de) * 1981-08-07 1983-02-24 Philips Patentverwaltung Gmbh, 2000 Hamburg Schaltungsanordnung mit einer widerstandsbruecke
JPS57103027A (en) * 1981-10-07 1982-06-26 Hitachi Ltd Semiconductor transducer

Also Published As

Publication number Publication date
US4604899A (en) 1986-08-12
EP0126907A2 (en) 1984-12-05
EP0126907B1 (en) 1989-09-20
EP0126907A3 (en) 1988-03-02
JPS59184819A (ja) 1984-10-20
DE3479831D1 (en) 1989-10-26

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